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IRFS9N60ATRRPBF

Power MOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60ATRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60A

SMPSMOSFET

IRF

International Rectifier

IRFSL9N60A

PowerMOSFETs

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdv/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60A

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamic dV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSDirective200

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MDF9N60

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N60B

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF9N60BTH

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFS9N60ATRRPBF

  • 功能描述：

    MOSFET N-Chan 600V 9.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
IR
2020+
原廠封裝
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
Vishay
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
14+PBF
TO-263
18000
現(xiàn)貨
 詢價(jià)
VISHAY
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IR
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IR
21+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多IRFS9N60ATRRPBF供應(yīng)商 更新時(shí)間2025-5-1 14:14:00

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