首頁 >IRFS4710PBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFS4710PBF | HEXFET? Power MOSFET | IRF International Rectifier | IRF | |
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100v,Rds(on)max=0.014ohm,Id=75A) Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●MotorControl ●Uninterru | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=12.7A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
VERYLOWDROPVOLTAGEREGULATORS VERYLOWDROPVOLTAGEREGULATORS 4700seriesvoltageregulatorsfeatureaverylowvoltage,drop,anoutputcurrentof500mAandprotectionagainstloaddumptransientsof±80V.Availablein5V,8.5V,and10V(±4)versions,theseregulatorsalsoincludereversepolarityprotection,overvoltagep | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
0.4inch(10.16mm)DIGITHEIGHT | LITEONLite-On Technology Corporation 光寶科技光寶科技股份有限公司 | LITEON | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司 | MSYSTEM | ||
0.400-INCHSEVENSEGMENTDISPLAYS | QT QT Brightek (QTB) | QT | ||
ZENERDIODES FEATURES ?SiliconPlanarZenerDiodes ?StandardZenervoltagetoleranceis±5.Othertolerancesareavailableuponrequest ?Hightemperaturesolderingguaranteed:250°C/10secondsatterminals. ?ThesediodesarealsoavailableinDO-35casewiththetypedesignation1N4681...1N4717andS | GE GE Industrial Company | GE | ||
AEC-Q101qualifiedavailable FEATURES ?SiliconplanarZenerdiodes ?StandardZenervoltagetoleranceis±5. ?AEC-Q101qualifiedavailable ?ESDcapabilityaccordingtoAEC-Q101:? Humanbodymodel>8kV? Machinemodel>800V ?BaseP/N-E3-RoHS-compliant,commercialgrade ?BaseP/N-HE3-RoHS-compliant, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconplanarZenerdiodes FEATURES ?SiliconplanarZenerdiodes ?StandardZenervoltagetoleranceis±5. ?AEC-Q101qualified ?ESDcapabilityaccordingtoAEC-Q101:Humanbodymodel>8kVMachinemodel>800V ?BaseP/N-G3-green,commercialgrade ?Materialcategorization:Fordefinitionsofcompliancepleas | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SmallSignalZenerDiodes | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SmallSignalZenerDiodes FEATURES ?SiliconplanarZenerdiodes ?StandardZenervoltagetoleranceis±5.Othertolerancesareavailableuponrequest ?ThesediodesarealsoavailableinDO-35casewiththetypedesignation1N4681to1N4717andSOD-123casewiththetypedesignationMMSZ4681-VtoMMSZ4717-V ?AEC-Q1 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ZENERDIODES ZENERDIODES VZ:1.8to43V PD:500mW FEATURES: *TotalPowerDissipation500mWonFR-4orFR-5Board *WideZenerReverseVoltageRange1.8Vto43V *PackageDesignedforOptimalAutomatedBoardAssembly *SmallPackageSizeforHighDensityApplications *Pb/RoHS | EIC EIC discrete Semiconductors | EIC | ||
ZENERDIODES FEATURES ?SiliconPlanarZenerDiodes ?StandardZenervoltagetoleranceis±5.Othertolerancesareavailableuponrequest. ?Hightemperaturesolderingguaranteed:250°C/10secondssetterminals. ?ThesediodesarealsoavailableinDO-35casewithtypedesignation1N4681...1N4717andSO | GE GE Industrial Company | GE | ||
SmallSignalZenerDiodes | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SILICONPLANARZENERDIODES SILICONPLANARZENERDIODES SOD-123PLASTICPCAKAGE | CDIL Continental Device India Limited | CDIL | ||
500mWSurfaceMountZenerDiodes Features ●TotalPowerDissipation500mWonFR-4orFR-5Board ●WideZenerReverseVoltageRange1.8Vto43V ●PackageDesignedforOptimalAutomatedBoardAssembly ●SmallPackageSizeforHighDensityApplications | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE |
詳細(xì)參數(shù)
- 型號:
IRFS4710PBF
- 功能描述:
MOSFET N-CH 100V 75A D2PAK
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
6 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-263 |
501407 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
24+ |
TO-263-3 |
8866 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
2023+ |
D2-pak |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
24+ |
D2-pak |
35200 |
一級代理/放心采購 |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT404 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
IR |
08+ |
D2-pak |
20000 |
普通 |
詢價 | ||
INFINEON |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
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