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IRFRC20TRRPBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IRFRC20TRRPBF |
功能描述 | Power MOSFET |
文件大小 |
1.82401 Mbytes |
頁面數(shù)量 |
8 頁 |
生產(chǎn)廠商 | Vishay Siliconix |
企業(yè)簡稱 |
Vishay【威世科技】 |
中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-18 17:30:00 |
IRFRC20TRRPBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC/SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFRC20, SiHFRC20
? Straight Lead (IRFUC20, SiHFUC20)
? Available in Tape and Reel
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號:
IRFRC20TRRPBF
- 功能描述:
MOSFET N-Chan 600V 2.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||||
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IR |
2023+ |
TO247 |
3872 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
D-pak |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
HARRIS |
24+ |
TO-3P |
18 |
詢價 | |||
IR |
21+ |
D-pak |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
23+ |
SOT-252 |
6000 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
IR |
2015+ |
DIP/SMD |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |