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IRFR48ZPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFR48ZPBF規(guī)格書(shū)詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRFR48ZPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
DPAK |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
IR |
22+ |
TO-252 |
8900 |
英瑞芯只做原裝正品!!! |
詢價(jià) | ||
2322+ |
NA |
33220 |
無(wú)敵價(jià)格 主銷(xiāo)品牌 正規(guī)渠道訂貨 免費(fèi)送樣!!! |
詢價(jià) | |||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價(jià) | |||
IR |
22+ |
DPAK |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢價(jià) | ||
IR |
2016+ |
TO-252 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
DPAK |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
TO252 |
53650 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
IR |
22+ |
TO252 |
34430 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |