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IRFR3710ZTRLPbF中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR3710ZTRLPbF規(guī)格書詳情
Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Multiple Package Options
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFR3710ZTRLPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
INFINEON |
2022 |
NA |
30000 |
原裝正品現(xiàn)貨支持實(shí)單 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-252-2(DPAK) |
19850 |
原裝正品,假一賠十 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-263 |
200 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
INFINEON |
22+ |
NA |
1033 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Infineon Technologies |
21+ |
D-Pak |
3000 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
