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IRFR320TRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR320TRRPBFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR320TRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU320

3.1A,400V,1.800Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRFU320

PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=3.1A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR320) ?Str

IRF

International Rectifier

IRFU320

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU320

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU320

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU320

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR320,SiHFR320) ?Straightlead(IRFU320,SiHFU320) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?999

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU320A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU320B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU320B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU320PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU320PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU320PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFY320

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY320C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRK320

MAGN-A-pakPowerModules

Description ThisnewIRKseriesofMAGN-A-paksuseshighvoltagepowerdiodesintwobasicconfigurations.Thesemiconductorsareelectricallyisolatedfromthemetalbase,allowingcommonheatsinksandcompactassembliestobebuilt.Theycanbeinterconnectedtoformsinglephaseorthreephas

IRF

International Rectifier

IRKC320

MAGN-A-pakPowerModules

Description ThisnewIRKseriesofMAGN-A-paksuseshighvoltagepowerdiodesintwobasicconfigurations.Thesemiconductorsareelectricallyisolatedfromthemetalbase,allowingcommonheatsinksandcompactassembliestobebuilt.Theycanbeinterconnectedtoformsinglephaseorthreephas

IRF

International Rectifier

IRKD320

MAGN-A-pakPowerModules

Description ThisnewIRKseriesofMAGN-A-paksuseshighvoltagepowerdiodesintwobasicconfigurations.Thesemiconductorsareelectricallyisolatedfromthemetalbase,allowingcommonheatsinksandcompactassembliestobebuilt.Theycanbeinterconnectedtoformsinglephaseorthreephas

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR320TRRPBF

  • 功能描述:

    MOSFET N-Chan 400V 3.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
VISHAY(威世)
23+
TO-252
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
IR
23+
D-PAK
19526
詢價(jià)
VISHAY
24+
TO252-2
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
VISHAY
23+
TO252-2
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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IR
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
詢價(jià)
VISHAY
2023+
TO252-2
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
只做原裝
24+
TO252-2
36520
一級(jí)代理/放心采購(gòu)
詢價(jià)
VISHAY/威世
23+
TO252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VISHAY(威世)
2112+
TO-252-3
115000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
詢價(jià)
更多IRFR320TRRPBF供應(yīng)商 更新時(shí)間2024-12-26 18:53:00