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IRFU214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.2A)

HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A

IRF

International Rectifier

IRFU214

2.2A,250V,2.000Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators

Intersil

Intersil Corporation

IRFU214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU214

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU214

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR214,SiHFR214) ?Straightlead(IRFU214,SiHFU214) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU214B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU214PBF

HEXFET?PowerMOSFET

HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR214TRLPBF

  • 功能描述:

    MOSFET N-Chan 250V 2.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
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IR
24+
TO-252
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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IR
2021+
TO-252
9000
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VISHAY(威世)
24+
TO-252
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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IR
1415+
TO-252
28500
全新原裝正品,優(yōu)勢(shì)熱賣
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IR
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
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IR
24+
TO-252
65300
一級(jí)代理/放心購(gòu)買!
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IR
22+
TO-252
20000
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VISHAY(威世)
2447
TO-252-3
115000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
詢價(jià)
VISHAY
1809+
TO-252
3675
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更多IRFR214TRLPBF供應(yīng)商 更新時(shí)間2025-7-2 18:05:00