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首頁 >IRFR210TR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR210TR	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRL	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRLA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRLPBF	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRLPBFA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRPBF	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRPBFA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRR	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRRA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRLPBFA	文件：834.32 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRLPBF-BE3AB	文件：834.32 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRPBFA	文件：834.32 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRPBF-BE3AB	文件：834.32 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRRPBF	文件：834.32 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

詳細(xì)參數(shù)

型號：
IRFR210TR
功能描述：
MOSFET N-Chan 200V 2.6 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市納艾斯科技有限公司	IRFR210TR	IR	2020+	TO-252	8000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價
深圳市珩瑞科技有限公司	IRFR210TR	IR	21+	TO-252	6000	原裝正品	詢價
深圳市創(chuàng)新跡電子有限公司	IRFR210TR	IR	2021+	TO-252	9000	原裝現(xiàn)貨,隨時歡迎詢價	詢價
深圳市匯萊威科技有限公司	IRFR210TR	IR	24+	TO-252	500889	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市力通偉業(yè)半導(dǎo)體有限公司	IRFR210TR	IR	13+	SOT-252	7500	特價熱銷現(xiàn)貨庫存	詢價
深圳市一線半導(dǎo)體有限公司	IRFR210TR	IR	24+	TO-252	6200	新進(jìn)庫存/原裝	詢價
深圳市星佑電子有限公司	IRFR210TR	IR	05+	原廠原裝	5100	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價
深圳市粵科源興科技有限公司	IRFR210TR	IR	13+	SOT252	21258	原裝分銷	詢價
深圳市科恒偉業(yè)電子有限公司	IRFR210TR	IR	2016+	TO-252	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價
深圳宇航軍工半導(dǎo)體有限公司	IRFR210TR	IR	19+	D-pak	74970	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價

更多IRFR210TR供應(yīng)商更新時間2024-10-26 9:20:00

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