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IRFM250中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFM250
廠商型號(hào)

IRFM250

功能描述

POWER MOSFET THRU-HOLE (TO-254AA)

文件大小

163.11 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 22:50:00

IRFM250規(guī)格書詳情

Part Number RDS(on) ID

IRFM250 0.100 ? 27.4A

HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

Features:

● Simple Drive Requirements

● Ease of Paralleling

● Hermetically Sealed

● Electrically Isolated

● Dynamic dv/dt Rating

● Light-weight

產(chǎn)品屬性

  • 型號(hào):

    IRFM250

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA

  • 功能描述:

    TRANS MOSFET N-CH 200V 27.4A 3PIN TO-254AA - Bulk

  • 功能描述:

    N CH MOSFET, 200V, 27.4A, TO-254AA; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    27.4A; Drain Source Voltage

  • Vds:

    200V; On Resistance

  • Rds(on):

    100mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

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23+
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2020+
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30
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200
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IR
17+
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詢價(jià)