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IRFR014

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR014,SiHFR014) ?Straightlead(IRFU014,SiHFU014) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014A

ADVANCEDPOWERMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=60V ?LowerRDS(ON):0.097?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR014PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014TR

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFL014NPBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
SOT-223
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
SOT-223TO-261
1760
詢價
IR
2016+
SOT223
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
2020+
SOT-223
20
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
24+
SOT-223
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
Infineon
24+
NA
3021
進口原裝正品優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
24+
SOT-223
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
IR
23+
SOT-223
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多IRFL014NPBF供應(yīng)商 更新時間2025-6-25 16:12:00

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