首頁>IRFIZ44NPBF>規(guī)格書詳情
IRFIZ44NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFIZ44NPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFIZ44NPBF
- 功能描述：
MOSFET MOSFT 55V 28A 24mOhm 43.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/IR |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
IR |
22+ |
28000 |
原裝現(xiàn)貨只有原裝.假一罰十 |
詢價 | |||
IR |
23+ |
TO-220F |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220F |
7000 |
詢價 | |||
IR |
24+ |
TO-220 |
20 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
2447 |
FULLPAK220 |
105000 |
2000個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
INFINEON |
24+ |
con |
73 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格 |
詢價 | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
INFINEON/英飛凌 |
2407+ |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | |||
Infineon/英飛凌 |
24+ |
FULLPAK220 |
25000 |
原裝正品,假一賠十! |
詢價 |
