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IRFI9540G中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFI9540G
廠商型號(hào)

IRFI9540G

功能描述

Power MOSFET

文件大小

285.55 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 20:00:00

IRFI9540G規(guī)格書詳情

FEATURES

? Isolated package

? High voltage isolation = 2.5 kVRMS (t = 60 s;

f = 60 Hz)

? Sink to lead creepage distance = 4.8 mm

? P-channel

? 175 °C operating temperature

? Dynamic dV/dt rating

? Low thermal resistance

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a

100 micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

產(chǎn)品屬性

  • 型號(hào):

    IRFI9540G

  • 功能描述:

    MOSFET P-Chan 100V 11 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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