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IRFG110

POWER MOSFET THRU-HOLE (MO-036AB)

IRF

International Rectifier

IRFG110

14 LEAD DUAL IN LINE QUAD

SEME-LAB

Seme LAB

IRFG110

Simple Drive Requirements

IRF

International Rectifier

IRFG110

POWER MOSFET THRU-HOLE (MO-036AB)

IRF

International Rectifier

IRFG110_15

Simple Drive Requirements

IRF

International Rectifier

IRFL110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

IRFL110PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

IRFL110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

IRFL110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

IRFL110TRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRFL110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFM110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFQ110

QUADN-CHANNELENHANCEMENTMOSFETS

SEME-LAB

Seme LAB

IRFR110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

Intersil

Intersil Corporation

IRFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導體

IRFR110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR110

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR110,SiHFR110) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFG110

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB

  • 功能描述：

    TRANS MOSFET N-CH 100V 1A 14PIN MO-036AB - Bulk

  • 功能描述：

    Single N-Channel 100 V 1.4 W 15 nC Hexfet Power Mosfet Through Hole - MO-036AB

  • 功能描述：

    N CHANNEL MOSFET, 100V, MO-036AB; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    1A; Drain Source Voltage

  • Vds：

    100V; On Resistance

  • Rds(on)：

    700mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V; No. of

  • Pins：

    14;RoHS

  • Compliant：

    No

供應商型號品牌批號封裝庫存備注價格
IR
10+
AUCDIP
235
交期準時 服務周到
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
65480
詢價
IR
2020+
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
I&R
24+
長期備有現(xiàn)貨
500000
行業(yè)低價,代理渠道
 詢價
InternationRectifer
22+
NA
30000
100%全新原裝 假一賠十
 詢價
IR
10+
AUCDIP
235
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
22+
CDIP
6000
終端可免費供樣,支持BOM配單
 詢價
INFINEON
23+
C-DIP-14
14253
原包裝原標現(xiàn)貨,假一罰十,
 詢價
IR
23+
AUCDIP
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多IRFG110供應商 更新時間2025-1-8 10:36:00

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