IRFF9133中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω

The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal package

Features:

■ Single pulse avalanche energy rated

■ SOA is power-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High input impedance