IRF7702TR中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7702TR規(guī)格書詳情
Description
HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45 less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
● Ultra Low On-Resistance
● -1.8V Rated
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile ( < 1.1mm)
● Available in Tape & Reel
產(chǎn)品屬性
- 型號:
IRF7702TR
- 功能描述:
MOSFET P-CH 12V 8A 8-TSSOP
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
20+ |
TSSOP8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
21+ |
8-TSSOP |
4000 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon Technologies |
21+ |
8TSSOP |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
SSOP8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
23+ |
TSSOP8 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
22+ |
8-TSSOP |
25000 |
只有原裝絕對原裝,支持BOM配單! |
詢價 | ||
IR |
23+ |
MSOP |
5847 |
原廠原裝正品 |
詢價 | ||
IR |
24+ |
TSOP |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
24+ |
8-TSSOP |
7500 |
詢價 | |||
IRF |
19+ |
TSSOP-14PI |
74706 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 |