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首頁 >IRF750>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF7501	文件：143.37 Kbytes Page：7 Pages	Power MOSFET(Vdss=20V, Rds(on)=0.135ohm) VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe	IRF International Rectifier	IRF
IRF7501PBF	文件：184.07 Kbytes Page：9 Pages	Generation V Technology Ulrtra Low On-Resistance VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe	IRF International Rectifier	IRF
IRF7503	文件：114.7 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm) VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7503PBF	文件：1.00898 Mbytes Page：8 Pages	HEXFET? Power MOSFET VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7503TR	文件：117.23 Kbytes Page：8 Pages	Generation V Technology VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7504	文件：115.76 Kbytes Page：8 Pages	Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm) VDSS=-20V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7504PBF	文件：1.08457 Mbytes Page：8 Pages	HEXFET Power MOSFET VDSS=-20V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7506	文件：103.43 Kbytes Page：8 Pages	Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm) VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7506	文件：210.51 Kbytes Page：8 Pages	HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm) VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7506PBF	文件：210.51 Kbytes Page：8 Pages	HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm) VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow	IRF International Rectifier	IRF
IRF7507	文件：216.02 Kbytes Page：8 Pages	Power MOSFET(Vdss=-20V) N-ChP-Ch VDSS20V-20V RDS(on)0.135?0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast	IRF International Rectifier	IRF
IRF7507PBF	文件：214.18 Kbytes Page：8 Pages	HEXFET?Power MOSFET N-ChP-Ch VDSS20V-20V RDS(on)0.135?0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast	IRF International Rectifier	IRF
IRF7509	文件：217.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi	IRF International Rectifier	IRF
IRF7509	文件：1.96618 Mbytes Page：8 Pages	30V NP-Channel Enhancement Mode MOSFET Description TheIRF7509usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeaturesVDS=30VID=6A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRF7509TR	文件：217.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi	IRF International Rectifier	IRF
IRF750A	文件：219.11 Kbytes Page：7 Pages	Advanced Power MOSFET BVDSS=400V RDS(on)=0.3? ID=15A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):0.254?	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF7501PBF	文件：184.07 Kbytes Page：9 Pages	Ulrtra Low On-Resistance	IRF International Rectifier	IRF
IRF7501PBF_15	文件：184.07 Kbytes Page：9 Pages	Ulrtra Low On-Resistance	IRF International Rectifier	IRF
IRF7501TRPBF	文件：184.07 Kbytes Page：9 Pages	Generation V Technology	IRF International Rectifier	IRF
IRF7503PBF	文件：1.01427 Mbytes Page：8 Pages	ULTRA LOW ON RESISTANCE	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號(hào)：
IRF750
制造商：
International Rectifier
功能描述：
MOSFET DUAL NN MICRO-8
功能描述：
MOSFET, DUAL, NN, MICRO-8

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRF7501PBF	IR	17+	MSOP-8	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市華來深電子有限公司	IRF7501PBF	IR	23+	MSOP-8	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRF7501PBF	IR	23+	MSOP8	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市芯福林電子科技有限公司	IRF7501PBF	IR	21+	MSOP8	13880	公司只售原裝,支持實(shí)單	詢價(jià)
深圳市勝彬電子有限公司	IRF7501PBF	IR	22+	MSOP-8	8000	原裝正品支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRF7501PBF	IR	23+	MSOP8	10880	原裝正品，支持實(shí)單	詢價(jià)
深圳市秉祺電子科技有限公司	IRF7501PBF	IR	21+	MSOP8	19600	一站式BOM配單	詢價(jià)
深圳市河鋒鑫科技有限公司	IRF7501PBF	IR	22+	MSOP-8	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市能元時(shí)代電子有限公司	IRF7501PBF	IR	23+	MSOP-8	69891	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF7501PBF	IR	23+	MSOP-8	8000	只做原裝現(xiàn)貨	詢價(jià)

更多IRF750供應(yīng)商更新時(shí)間2025-1-13 16:00:00

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