首頁 >IRF740LCSPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandC | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
10A,400VHeatsinkN-ChannelTypePowerMOSFET | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導體思祁半導體有限公司 | THINKISEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-CHANNEL400V-0.48ohm-10A-D2PAKPowerMESH]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.48? ■EXTREMELYHIGHdv/dtCAPABILITY ■100 | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體(ST)集團 | STMICROELECTRONICS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=0.55廓,ID=10A) | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A) Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp | IRF International Rectifier | IRF | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A) Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
IRF740LCSPBF
- 制造商:
Vishay Angstrohm
- 功能描述:
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO263 |
7000 |
詢價 | |||
VISHAY |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VB |
21+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Vishay Siliconix |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原裝正品,支持實單 |
詢價 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
I |
24+ |
TO-263 |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
INTERNATIONA |
05+ |
原廠原裝 |
22421 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
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