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IRF730ASTRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730ASTRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF730B

LowAreaSpecificOn-Resistance

FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

KERSEMI

Kersemi Electronic Co., Ltd.

IRF730B

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF730B

DSeriesPowerMOSFET

FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730F

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

IRF730FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=3.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF730FP

6.0A400VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2022+
SOT263
800
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 詢(xún)價(jià)
IR
23+
SOT263
67425
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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IR
23+
SOT263
6800
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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IR
23+
SOT263
8000
只做原裝現(xiàn)貨
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IR
23+
SOT263
7000
詢(xún)價(jià)
IR
20+
SOT263
800
進(jìn)口原裝現(xiàn)貨,假一賠十
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IR
23+
TO-263
9500
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VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
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更多IRF730ASTRLPBFA供應(yīng)商 更新時(shí)間2025-4-10 14:00:00

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