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IRF7304QPBF規(guī)格書詳情
Description
These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7304QPBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
VB |
SOP-8 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
21+ |
SOIC-8 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IRC |
1535+ |
557 |
詢價 | ||||
IR |
22+ |
dc0741 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IRC |
23+ |
557 |
全新原裝，歡迎來電咨詢 |
詢價 | |||
IR |
1923+ |
SOP8 |
5000 |
正品原裝品質假一賠十 |
詢價 |
