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IRF7105QPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF7105QPBF規(guī)格書(shū)詳情
DESCRIPTION
These HEXFET?Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
? Advanced Process Technology
? Ultra Low On-Resistance
? Dual N and P Channel MOSFET
? Surface Mount
? Available in Tape & Reel
? 150°C Operating Temperature
? Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF7105QPBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
SOP8 |
74605 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
IR |
2020+ |
SO-8 |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR |
2016+ |
SOP8 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SO-8 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢價(jià) | ||
IR |
12+ |
SOP8 |
4220 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
65300 |
一級(jí)代理/放心購(gòu)買(mǎi)! |
詢價(jià) | ||
IR |
21+ |
SO-8 |
9866 |
詢價(jià) | |||
IR |
2022+ |
SO-8 |
8800 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) |
