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IRF7101TRPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7101TRPBF規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF7101TRPBF
- 功能描述:
MOSFET MOSFT DUAL NCh 20V 3.5A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
SOIC-8_150mil |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR |
2016+ |
SOP8 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
IR |
2020+ |
SO-8 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
4000 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
Infineon/英飛凌 |
23+ |
SOIC-8_150mil |
25000 |
原裝正品,假一賠十! |
詢價 | ||
INFINEON |
21+ |
標準封裝 |
100 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號 |
詢價 | ||
IR |
新年份 |
SOP-8 |
18875 |
原裝正品現(xiàn)貨,實單帶TP來談! |
詢價 | ||
IR |
11+ |
SO-8 |
1122 |
詢價 | |||
IR |
23+ |
SOP8 |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
21+ |
SOP-8 |
490 |
只做原裝,歡迎來電咨詢 |
詢價 |