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IRF6726MTRPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF6726MTRPBF
廠商型號

IRF6726MTRPBF

功能描述

DirectFET Power MOSFET

文件大小

252.19 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-4 8:02:00

IRF6726MTRPBF規(guī)格書詳情

Description

The IRF6726MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

● RoHS Compliant Containing No Lead and Bromide

● Low Profile (<0.7 mm)

● Dual Sided Cooling Compatible 

● Ultra Low Package Inductance

● Optimized for High Frequency Switching 

● Ideal for CPU Core DC-DC Converters

● Optimized for both Sync.FET and some Control FET application

● Low Conduction and Switching Losses

● Compatible with existing Surface Mount Techniques

● 100 Rg tested

產(chǎn)品屬性

  • 型號:

    IRF6726MTRPBF

  • 功能描述:

    MOSFET 30V 1 N-CH HEXFET DIRECTFET MX

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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IR
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全新原裝公司現(xiàn)貨
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原裝現(xiàn)貨,支持實單
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