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IRF6648TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF6648TR1
廠商型號

IRF6648TR1

功能描述

RoHs Compliant Containing No Lead and Bromide

文件大小

273.91 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-1 18:24:00

IRF6648TR1規(guī)格書詳情

Description

The IRF6648 combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

● RoHs Compliant Containing No Lead and Bromide

● Low Profile (<0.7 mm)

● Dual Sided Cooling Compatible

● Ultra Low Package Inductance

● Optimized for High Frequency Switching

● Optimized for Synchronous Rectification for 5V to 12V outputs

● Ideal for 24V input Primary Side Forward Converters

● Low Conduction Losses

● Compatible with Existing Surface Mount Techniques

產(chǎn)品屬性

  • 型號:

    IRF6648TR1

  • 功能描述:

    MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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21+
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