IRF6645中文資料IRF數據手冊PDF規(guī)格書
IRF6645規(guī)格書詳情
Description
The IRF6645 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
產品屬性
- 型號:
IRF6645
- 功能描述:
MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2018+ |
QFN |
6000 |
全新原裝正品現貨,假一賠佰 |
詢價 | ||
IR |
22+23+ |
DIRECTFET |
6798 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
IR |
DIRECTFET |
68900 |
原包原標簽100%進口原裝常備現貨! |
詢價 | |||
INFINEON/英飛凌 |
21+ |
NA |
12820 |
只做原裝,質量保證 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
IR |
22+ |
DIRECTFET |
179620 |
原裝正品現貨,可開13點稅 |
詢價 | ||
IR |
19+ |
74593 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | |||
IR |
22+ |
DIRECTFET |
9000 |
原裝正品 |
詢價 | ||
IR |
23+ |
SMD |
2066 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IR |
17+ |
DIRECTF |
6200 |
100%原裝正品現貨 |
詢價 |