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IRF6637PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6637PBF規(guī)格書詳情
Description
The IRF6637PbF combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHS Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses and Switching Losses
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
21+ |
QFN |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
IR |
21+ |
QFN |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IR |
2020+ |
QFN |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
IR |
QFN |
6000 |
原裝現(xiàn)貨,長期供應(yīng),終端可賬期 |
詢價(jià) | |||
IR |
23+ |
QFN |
9896 |
詢價(jià) | |||
IR |
22+ |
QFN |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
1923+ |
QFN |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價(jià) |