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IRF6631TRPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF6631TRPBF
廠商型號(hào)

IRF6631TRPBF

功能描述

Lead-Free (Qualified up to 260?C Reflow)

文件大小

253.72 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱(chēng)

IRF

中文名稱(chēng)

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-1 23:00:00

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IRF6631TRPBF規(guī)格書(shū)詳情

Description

The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

? RoHs Compliant 

? Lead-Free (Qualified up to 260°C Reflow)

? Application Specific MOSFETs

? Ideal for CPU Core DC-DC Converters

? Low Switching and Conduction Losses

? Low Profile (<0.7mm)

? Dual Sided Cooling Compatible 

? Compatible with existing Surface Mount Techniques

產(chǎn)品屬性

  • 型號(hào):

    IRF6631TRPBF

  • 功能描述:

    MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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