首頁(yè)>IRF6622PBF>規(guī)格書(shū)詳情
IRF6622PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF6622PBF規(guī)格書(shū)詳情
Description
The IRF6622PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào):
IRF6622PBF
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
DirectFET Power MOSFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
SMD |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
21+ |
65230 |
詢價(jià) | ||||
IR |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
24+ |
DirectFETtradeIso |
2000 |
詢價(jià) | |||
Infineon Technologies |
21+ |
DirectFET? Isometric SQ |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IR |
SMD |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
SMD |
6000 |
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期 |
詢價(jià) | |||
IR |
22+ |
ROHS |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
ROHS |
13352 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) |