IRF6616中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6616規(guī)格書詳情
Description
The IRF6616 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS compliant containing no lead or bormide
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Ultra Low Package Inductance
? Optimized for High Frequency Switching
? Low Conduction and Switching Losses
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6616
- 功能描述：
MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
DIRECTFET |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR/INFINEON |
24+23+ |
NA |
12580 |
16年現(xiàn)貨庫存供應商終端BOM表可配單提供樣品 |
詢價 | ||
Infineon/英飛凌 |
23+ |
DIRECTFET |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IR |
2102+ |
DIRECTFET |
6854 |
只做原廠原裝正品假一賠十! |
詢價 | ||
IR |
23+ |
NA |
15310 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
21+ |
SMD |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
Infineon/英飛凌 |
21+ |
DIRECTFET |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
72000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
Infineon/英飛凌 |
23+ |
DIRECTFET |
25630 |
原裝正品 |
詢價 | ||
IR |
NA |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 |
