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IRF6604TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6604TR1規(guī)格書詳情
Description
The IRF6604 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6604TR1
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
0641+ |
QFN |
985 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INTEGRATION |
24+ |
NA/ |
4250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
22+ |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | |||
IR |
2020+ |
QFN-8 |
1285 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
24+ |
QFN-8 |
16500 |
進口原裝正品現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
21+ |
DIRECTFET? MQ |
1000 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
IR |
20+ |
SURFACEMOUNTCAN-DIRE |
32500 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
24+ |
SURFACEMOUNTCAN-DIRE |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
22+ |
20000 |
保證原裝正品,假一陪十 |
詢價 |
