IRF630中文資料尼爾半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
IRF630規(guī)格書詳情
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated circuits.
FEATURES
● RDS(ON) = 0.40? @ VGS = 10V
● Ultra low gate charge(43nC max.)
● Low reverse transfer capacitance
(CRSS = 80pF typical)
● Fast switching capability
● 100 avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature
產(chǎn)品屬性
- 型號：
IRF630
- 功能描述：
MOSFET N-Ch 200 Volt 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
DIP-16 |
6500 |
全新原裝假一賠十 |
詢價 | ||
HA |
23+ |
TO-220 |
65480 |
詢價 | |||
2015+ |
500 |
公司現(xiàn)貨庫存 |
詢價 | ||||
STM |
23+ |
TO-220-3 |
50000 |
原裝正品 支持實單 |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
STMicroelectronics |
23+ |
MOSFET |
5864 |
原裝原標(biāo)原盒 給價就出 全網(wǎng)最低 |
詢價 | ||
ST |
23+24 |
TO-220 |
49820 |
主營全系列二三極管、MOS場效應(yīng)管、 |
詢價 | ||
ST |
22+ |
TO-220 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
STM |
NA |
16355 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 |
