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IRF610S

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRF610S

Surface mount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導體

IRF610S

Power MOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF610S_V01

Power MOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF610SPBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRF610SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF610STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF610STRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS610A

AdvencedPowerMOSFET(N-CHANNEL)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    IRF610S

  • 功能描述：

    MOSFET N-Chan 200V 3.3 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
17+
D2-PAK
31518
原裝正品 可含稅交易
 詢價
IR
24+
TO-263
501305
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
IR
24+
D2-Pak
8866
詢價
IR
23+
D2-Pak
11026
全新原裝
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
IR
24+
D2-PAK
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
NXP/恩智浦
23+
SOT-23
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多IRF610S供應商 更新時間2025-3-17 14:01:00

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