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IRF540NSTRLPBF

Advanced Process Technology

IRF

International Rectifier

IRF540NSTRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF540NSTRR

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NSTRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540PBF

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF540PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF540PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540S

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF540S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導體

IRF540S

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF540S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導體

IRF540S

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF540SPBF

HEXFET?PowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

IRF

International Rectifier

IRF540SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導體

IRF540SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF540STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導體

IRF540STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF540STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導體

IRF540STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF540Z

AUTOMOTIVEMOSFET

VDSS=100V RDS(on)=26.5m? ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte

IRF

International Rectifier

詳細參數

  • 型號：

    IRF540NSTRL

  • 功能描述：

    MOSFET MOSFT 100V 33A 44mOhm 47.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
21+
TO-263
7200
絕對原裝INFINEON正品現貨，12年信譽保證只做原裝、一定有貨！張小姐電話：0755-82797778 13692179527微信同號，歡迎查詢！
 詢價
INFINEON
21+/22+
73500
原裝正品
 詢價
IR
23+
TO-263
12000
保證進口原裝現貨假一賠十
 詢價
IR
2020+
TO-263
9600
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-263
22000
全新原裝正品 現貨庫存 價格優(yōu)勢
 詢價
INFINEON
新年份
N/A
20000
原裝現貨,質量保證,可出樣品可開稅票
 詢價
INFINEON/IR
1907+
NA
4800
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON
22+
D2PAK
8000
原裝正品可支持驗貨,歡迎咨詢
 詢價
INFINEON
22+
sot
6600
正品渠道現貨,終端可提供BOM表配單。
 詢價
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導體產品-原裝正品
 詢價
更多IRF540NSTRL供應商 更新時間2025-1-19 14:20:00

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