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IRF540A

AdvancedPowerMOSFET

Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF540A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF540A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540D

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540F

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540FI

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF540FI

iscN-ChannelMosfetTransistor

DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540I

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve

Intersil

Intersil Corporation

IRF540N

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF540N

N-ChannelMosfetTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.044? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540N

AdvancedProcessTechnology

VDSS=100V RDS(on)=44m? ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540N

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF540N

33A,100V,0.040Ohm,N-Channel,PowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF540N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540NL

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

IRF

International Rectifier

IRF540NL

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF540NL

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF540/D

  • 功能描述：

    N-Channel Enhancement-Mode Silicon Gate

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
新
1480
全新原裝 貨期兩周
 詢價
VIS
24+
TO-TO-220AB
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
INTERNATIONA
05+
原廠原裝
4416
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
7000
詢價
INTERNATIONALRECTIFIER
24+
35200
一級代理/放心采購
 詢價
IR
23+24
TO-263
59630
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管
 詢價
IR
2022
14
全新原裝現(xiàn)貨熱賣
 詢價
NXP
21+
TO2203
13880
公司只售原裝,支持實單
 詢價
更多IRF540/D供應(yīng)商 更新時間2025-1-3 16:06:00

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