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IRF511中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書

IRF511
廠商型號

IRF511

功能描述

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

文件大小

71.57 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-8 17:23:00

IRF511規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 4.9A, and 5.6A, 80V and 100V

? rDS(ON) = 0.54? and 0.74?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    IRF511

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Freescale Semiconductor

  • 功能描述:

    SUB ONLY ON SEMICONDUCTOR

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