首頁 >IRF3415LPBF>規(guī)格書列表

零件編號(hào)下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF3415PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415S

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3415S

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415SPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRR

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3415

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤42m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP3415

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRFP3415PBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF3415LPBF

  • 制造商：

    International Rectifier

  • 功能描述：

    N CHANNEL MOSFET, 150V, 43A, TO-262, Transistor

  • Polarity：

    N Channel, Continuous D

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
2016+
TO-262
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
24+
TO-262-3
77
詢價(jià)
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價(jià)
IR
2020+
TO-262
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
22+
TO-262
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
IR
TO-262
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
IR
11+
TO-262
3842
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
IR
22+
TO-262
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
更多IRF3415LPBF供應(yīng)商 更新時(shí)間2025-1-24 14:57:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多