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IRF3205ZSPBF中文資料IRF數據手冊PDF規(guī)格書
IRF3205ZSPBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產品屬性
- 型號:
IRF3205ZSPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
20+ |
TO-263 |
65300 |
一級代理/放心購買! |
詢價 | ||
IR |
SOT-263 |
30216 |
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詢價 | |||
IR |
2023+ |
SOT-263 |
80000 |
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詢價 | ||
IR |
1844+ |
SOT-263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
90000 |
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詢價 | ||
VB |
D2PAK |
68900 |
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詢價 | |||
IR |
19+ |
TO-263 |
74526 |
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詢價 | ||
IR |
22+23+ |
TO263 |
75981 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2020+ |
TO-263 |
15000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |