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IRF2807SPBF規(guī)格書詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF2807L) is available for low profile applications
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF2807SPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO263 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
IR |
22+ |
TO-263 |
9000 |
原裝正品 |
詢價 | ||
IR |
23+ |
TO-263 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
22+ |
NA |
100013 |
全新原裝正品現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
23+ |
TO-263 |
9896 |
詢價 | |||
IR |
22+23+ |
TO-263 |
17819 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
VBsemi |
2226+ |
TO263 |
5835 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-263 |
8000 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
IR |
20+ |
TO-263 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
