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IRF2807LPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF2807S

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807SPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF2807LPBF

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N-Channel 75V 82A TO262

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
1003+
TO-262
1000
普通
 詢價(jià)
IR
2022
TO-262
20000
全新原裝現(xiàn)貨熱賣
 詢價(jià)
IR
21+
TO262
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
TO262
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
INFINEON/IR
2023+
TO-262
8635
一級(jí)代理優(yōu)勢(shì)現(xiàn)貨,全新正品直營(yíng)店
 詢價(jià)
IR
22+
IRF2807L
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-262
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-262
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多IRF2807LPBF供應(yīng)商 更新時(shí)間2025-2-3 9:03:00

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