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IRF540

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540

25Aand28A,80Vand100V,0.077and0.100Ohm,N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF540

iscN-ChannelMosfetTransistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF540

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=100V,ID=30A,RDS(ON)≤70m?@VGS=10V 2)Lowgatecharge. 3)Greendeviceavailable. 4)Advancedhig

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRF540

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF540

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=77mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedespeciallyforhi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540A

AdvancedPowerMOSFET

Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    IRC540PBF

  • 功能描述：

    MOSFET N-Chan 100V 28 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO2205
8653
全新原裝優(yōu)勢
 詢價
IR
17+
TO-220
9888
只做原裝,現(xiàn)貨庫存
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220
12000
全新原裝假一賠十
 詢價
IR/VISH
24+
65230
詢價
VISHAY
1503+
TO220-5
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Siliconix
22+
TO2205
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
21+
TO2205
13880
公司只售原裝,支持實單
 詢價
IR/Vishay
23+
TO-220-5
6000
原裝正品，支持實單
 詢價
Vishay Siliconix
2022+
TO-220-5
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IRC540PBF供應(yīng)商 更新時間2025-4-28 10:31:00

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