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IPW65R110CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFD

N-Channel MOSFET Transistor

?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW65R110CFD

Marking：65F6110；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFD7

Marking：65R110F7；Package：PG-TO247-3；650V CoolMOS? CFD7 SJ Power Device

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R110CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPW65R110CFD

  • 功能描述：

    MOSFET N-Channel MOSFET 650V 110mOhm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2020+
TO-247
22000
全新原裝正品 現(xiàn)貨庫存 價(jià)格優(yōu)勢
 詢價(jià)
INFINEON
23+
TO-247
16500
一級分銷商!
 詢價(jià)
INFINEON
24+
標(biāo)準(zhǔn)
46637
熱賣原裝進(jìn)口
 詢價(jià)
INFINEO
16+
TO-247
6102
全新原裝/深圳現(xiàn)貨庫2
 詢價(jià)
INFINEON/英飛凌
24+
TO247
20000
原廠原裝,正品現(xiàn)貨,假一罰十
 詢價(jià)
INFINEON/英飛凌
24+
TO-247
18070
原裝進(jìn)口假一罰十
 詢價(jià)
INF
25+
TO-247
6000
原裝正品!!!優(yōu)勢庫存!0755-83210901
 詢價(jià)
INFINEON/英飛凌
24+
TO-247
230
只做原廠渠道 可追溯貨源
 詢價(jià)
INFINEON/英飛凌
23+
TO247
26097
誠心經(jīng)營 原盒原標(biāo) 正品現(xiàn)貨 價(jià)格美麗假一罰十
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多IPW65R110CFD供應(yīng)商 更新時(shí)間2025-6-12 11:03:00

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