首頁(yè) >IPP120N20NFD>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPP120N20NFD | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IPP120N20NFD | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?SiliconChiponDirect-CopperBond(DCB)Substrate ?IsolatedMountingSurface ?2500V~ElectricalIsolation ?AvalancheRated ?FastIntrinsicRectifier ?Lo | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage-:VDSS=200V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
22+ |
TO220 |
42000 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
22+ |
SMD |
1250 |
場(chǎng)效應(yīng)管/明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon Technologies |
24+ |
標(biāo)準(zhǔn) |
52824 |
熱賣原裝進(jìn)口 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
16971 |
原裝進(jìn)口假一罰十 |
詢價(jià) | ||
INFINOEN |
21+ |
TO-220 |
36800 |
進(jìn)口原裝現(xiàn)貨 假一賠十 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO220 |
3200 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Infineon英飛凌專營(yíng) |
TO-220 |
9000 |
原裝現(xiàn)貨當(dāng)天可交貨,長(zhǎng)期備貨支持BOM配單賬期 |
詢價(jià) | |||
INFINEON |
24+ |
TO-220 |
2000 |
只做原裝 有掛有貨 假一賠十 |
詢價(jià) | ||
Infineon(英飛凌) |
2023+ |
PG-TO220-3 |
4550 |
全新原裝正品 |
詢價(jià) |
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