首頁 >IPP111N15N3>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IPP111N15N3

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP111N15N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP111N15N3-G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP111N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI111N15N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI111N15N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI111N15N3-G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;Halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    IPP111N15N3

  • 功能描述:

    MOSFET N-Channel 150V MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
標準封裝
10048
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON
23+
TO220
20000
原廠原裝正品現(xiàn)貨
詢價
INFINEON
2023+
TO220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
INFINEON/英飛凌
23+
TO220-3
10000
公司只做原裝正品
詢價
Infineon(英飛凌)
23+
N/A
589610
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理!
詢價
Infineon/英飛凌
22+
TO220-3
6000
十年配單,只做原裝
詢價
Infineon/英飛凌
23+
TO220-3
6000
原裝正品,支持實單
詢價
Infineon(英飛凌)
22+
NA
7000
原廠原裝現(xiàn)貨
詢價
INFIONE
1605+
TO220
30
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
更多IPP111N15N3供應(yīng)商 更新時間2024-11-17 9:38:00