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IPP045N10N3

OptiMOS?? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

OptiMOS?? Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

OptiMOS?? Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G

100 V N-Channel MOSFET

Features ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?VDS ?ID=137A ?RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IPP045N10N3G

OptiMOS?? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3-G

OptiMOS?? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP045N10N3G_16

OptiMOS?? Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPA045N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA045N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA045N10N3G

OptiMOSTM3Power-Transistor

VDS100V RDS(on),max4.5mW ID64A Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Ideal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA045N10N3G

OptiMOSTM3Power-Transistor,100V

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA045N10N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPC045N10N3

N-channelenhancementmode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI045N10N3G

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI045N10N3G

OptiMOS??Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI045N10N3-G

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    IPP045N10N3

  • 功能描述:

    MOSFET N-KANAL POWER MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
標準封裝
9133
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON
19+
TO-220-3
518000
明嘉萊只做原裝正品現(xiàn)貨
詢價
Infineon/英飛凌
23+
TO220
30000
全新原裝現(xiàn)貨特價銷售,歡迎來電查詢
詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
INFINEO
2016+
TO220
6526
只做原裝正品!假一賠十!只要有上一定有貨的!
詢價
INFINEO
21+
TO220
12588
原裝正品,自己庫存 假一罰十
詢價
INFINEON/英飛凌
23+
TO220
90000
一定原裝房間現(xiàn)貨
詢價
英飛凌
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
INFINEON
1206+
TO220
20
普通
詢價
更多IPP045N10N3供應(yīng)商 更新時間2024-12-23 11:55:00