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IIPD65R380E6

N-ChannelMOSFETTransistor

?DESCRITION ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP65R380E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R380E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R380E6

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R380E6

650VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R380E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R380E6

N-ChannelMOSFETTransistor

?DESCRITION ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD65R380E6

650VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R380E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP65R380E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPD65R380E6XT

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252

  • 功能描述：

    MOSFET N-CH 650V 10.6A TO252

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
INFINEON/英飛凌
22+
TO-252
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
INFINEON/英飛凌
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
INFINEON/英飛凌
24+
TO-252
60000
詢價
三年內(nèi)
1983
只做原裝正品
 詢價
INFINEON/英飛凌
23+
TO-252
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
Infineon(英飛凌)
2447
PG-TO252-3
115000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
更多IPD65R380E6XT供應(yīng)商 更新時間2025-6-4 15:01:00

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