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IPD060N03LG

30VN-ChannelMOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IPD060N03LG

OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS

OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF060N03LG

OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS

OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS060N03LG

OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS

OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU060N03L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPU060N03LG

OptiMOS??Power-TransistorFeaturesFastswitchingMOSFETforSMPS

OptiMOS?3Power-Transistor Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Avalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

RTW060N03

N-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

TF060N03M

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF060N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導體深圳市拓鋒半導體科技有限公司

TF060N03N

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF060N03NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導體深圳市拓鋒半導體科技有限公司

TSM060N03

N-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM060N03CP

30VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM060N03CPROG

30VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM060N03ECP

30VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM060N03ECPROG

30VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

詳細參數(shù)

  • 型號：

    IPD060N03L G

  • 功能描述：

    MOSFET N-CH 30V 50A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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更多IPD060N03L G供應商 更新時間2024-12-28 16:30:00

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