首頁 >IP5305_YYY>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1.2ACharging1.0ADischargeHighlyIntegratedMobilePowerSOC | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | ||
supportHighandlowvoltageSCP,two-wayPD3.0andothermobilepowerSOCswithallfastchargingprotocols characteristic SupportmultipleUSBportsatthesametime ?2USBAportoutputs ?1USBBportinput ?1USBCportinputandoutput ?1lightninginputport Fastchargingspecifications ?Anyportsupportsfastcharging ?IntegratedQC2.0/QC3.0outputfastchargingprotocol ?Integra | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | ||
Supportstwo-waySCP,VOOC,PD3.0andotherfastchargingprotocols,supports2~5cellsinseriesIntegratedbuck-boostdriver,maximumpower100WmobilepowersupplySOC characteristic SupportmultipleUSBportsatthesametime ?2USBAportoutputs ?1USBCportinput/output ?1USBBportorLightningportinputorCportinput/output out Fastchargingspecifications ?Anyportsupportsfastcharging ?IntegratedQC2.0/QC3.0/QC3+outputfastchargin | INJOINICInjoinic Technology Co.,Ltd. 英集芯深圳英集芯科技股份有限公司 | INJOINIC | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.06ohm,Id=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
-55VP-ChannelMOSFET Features VDS(V)=-55V ID=-31A(VGS=-10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.06ohm,Id=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
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