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KSC5338

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=450V(Min) ?HighSwitchingSpeed ?WideAreaofSafeOperation APPLICATIONS ?Designedforswitchingregulatorandgeneralpurposeapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KSC5338

HighVoltagePowerSwitchSwitchingApplication

HighVoltagePowerSwitchSwitchingApplication ?HighSpeedSwitching ?WideSOA

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5338D

HighVoltagePowerSwitchSwitchingApplication

Features ?HighVoltagePowerSwitchSwitchingApplication ?WideSafeOperatingArea ?Built-inFree-WheelingDiode ?SuitableforElectronicBallastApplication ?SmallVarianceinStorageTime ?TwoPackageChoices:TO-220orD2-PAK

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5338D

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage VCEO:450V(Min) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max.)@IC=0.8A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighvoltageandgeneralpurposeapplicatio

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KSC5338DW

HighVoltagePowerSwitchSwitchingApplication

Features ?HighVoltagePowerSwitchSwitchingApplication ?WideSafeOperatingArea ?Built-inFree-WheelingDiode ?SuitableforElectronicBallastApplication ?SmallVarianceinStorageTime ?TwoPackageChoices:TO-220orD2-PAK

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5338F

HighVoltagePowerSwitchSwitchingApplication

HighVoltagePowerSwitchSwitchingApplication ?HighSpeedSwitching ?WideSOA

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MIC5338

Dual300mA關(guān)CapLDOin1.6mmx1.6mmThinMLF?

GeneralDescription TheMIC5338/9isanadvanceddual300mALDOidealforpoweringgeneralpurposeportabledevicesrequiringlowoutputnoiseandexcellentPowerSupplyRejectionRatio(PSRR).TheMIC5338/9providestwoindependentlycontrolled,highperformance,300mALDOsinatiny1.6mmx1.6

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC5338-MGYMT

Dual300mA關(guān)CapLDOin1.6mmx1.6mmThinMLF?

GeneralDescription TheMIC5338/9isanadvanceddual300mALDOidealforpoweringgeneralpurposeportabledevicesrequiringlowoutputnoiseandexcellentPowerSupplyRejectionRatio(PSRR).TheMIC5338/9providestwoindependentlycontrolled,highperformance,300mALDOsinatiny1.6mmx1.6

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC5338-SMYMT

Dual300mA關(guān)CapLDOin1.6mmx1.6mmThinMLF?

GeneralDescription TheMIC5338/9isanadvanceddual300mALDOidealforpoweringgeneralpurposeportabledevicesrequiringlowoutputnoiseandexcellentPowerSupplyRejectionRatio(PSRR).TheMIC5338/9providestwoindependentlycontrolled,highperformance,300mALDOsinatiny1.6mmx1.6

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

NCP5338

IntegratedDriverandMOSFET

TheNCP5338integratesaMOSFETdriver,high?sideMOSFET andlow?sideMOSFETintoa6mmx6mm40?pinQFNpackage. ThedriverandMOSFETshavebeenoptimizedforhigh?current DC?DCbuckpowerconversionapplications.TheNCP5338 integratedsolutiongreatlyreducespackageparasiticsandboard

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IN5338B

  • 制造商：

    THOMSON

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更多IN5338B供應(yīng)商 更新時(shí)間2025-3-21 9:30:00

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