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IRF460

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

SEME-LAB

Seme LAB

IRF460

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.27ohm,Id=21)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF460

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF460

RepetitiveAvalancheRatings

IRF

International Rectifier

IRF460

500V,N-CHANNEL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF460

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF460

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF460PBF

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-204AA/AE)

IRF

International Rectifier

IRFI460

TRANSISTORN-CHANNEL(Vdss=500V,Rds(on)=0.27ohm,Id=21A)

REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFET?TRANSISTOR N-CHANNEL

IRF

International Rectifier

IRFI460

SimpleDriveRequirements

IRF

International Rectifier

IRFM460

POWERMOSFETTHRU-HOLE(TO-254AA)

IRF

International Rectifier

IRFM460

SimpleDriveRequirements

IRF

International Rectifier

IRFM460

500V,N-CHANNEL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP460

MegaMOS-PowerMOSFET

MegaMOS?PowerMOSFETN-ChannelEnhancementMode,HDMOS?Family Features ●Repetitiveavalancheenergyrated ●Fastswitchingtimes ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●HighCommutatingdv/dtRating Applications ●SwitchingPowerSupplies ●Motorcontr

IXYS

IXYS Corporation

IRFP460

N-CHANNEL500V-0.22ohm-20A-TO-247PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.22? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP460

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRFP460issuppliedi

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRFP460

20A,500V,0.270Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP460

PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A)

Features ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMoutingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements.

IRF

International Rectifier

IRFP460

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP460

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IN460CMS

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    PS, IEC, REPL, INTERIOR, 4W, 60A

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SERTECH
24+
35
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23+
10000
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23+
NA
19960
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22+
DIP
16900
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ST
24+
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200000
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ST
21+
DO-41
10000
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ST
24+
DIPSMD
100000
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23+
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50000
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2022
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80000
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3450
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更多IN460CMS供應(yīng)商 更新時(shí)間2025-1-8 15:43:00

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