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IRF620A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?LowRDS(on)=0.626W(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF620FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF620FI

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF620N

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF620PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRF620PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620PBF

PowerMOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF620R

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedforhighspeedapplications, suchasswitchingpowersupplies,ACandDC motorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF620S

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    ILQ620GB

  • 功能描述：

    晶體管輸出光電耦合器 Phototransistor Out Quad CTR >100%

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 輸入類型：

    DC

  • 最大集電極/發(fā)射極電壓：

    70 V

  • 最大集電極/發(fā)射極飽和電壓：

    0.4 V

  • 絕緣電壓：

    5300 Vrms

  • 電流傳遞比：

    100 % to 200 %

  • 最大正向二極管電壓：

    1.65 V

  • 最大輸入二極管電流：

    60 mA

  • 最大集電極電流：

    100 mA

  • 最大功率耗散：

    100 mW

  • 最大工作溫度：

    + 110 C

  • 最小工作溫度：

    - 55 C

  • 封裝/箱體：

    DIP-4

  • 封裝：

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Semiconductor Opto Divi
24+
16-DIP(0.300,7.62mm)
25000
in stock隔離器IC-原裝正品
 詢價
VISHAY
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
24+
DIP
25000
詢價
INF
04+
DIP
2000
詢價
INFINEON
25+
DIP16
3293
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
INFINEON
10+
DIP-16
7800
全新原裝正品,現(xiàn)貨銷售
 詢價
INFINEON
10+
DIP-16
6878
只售全新原裝貨真實實數(shù)現(xiàn)貨放心
 詢價
VISHAY
2020+
DIP-16
20
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
VISHAYSE
24+
DIP16
5000
只做原裝公司現(xiàn)貨
 詢價
VISHAY
19+
DIPSOP16
74109
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多ILQ620GB供應(yīng)商 更新時間2025-3-26 16:38:00

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