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IXFA30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

IXFC30N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFC30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurr

IXYS

IXYS Corporation

IXFH30N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFH30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IKW30N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 30A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
原裝
24+
標準
43494
熱賣原裝進口
 詢價
INFINEON
24+
TO-247
60000
原裝正品進口現(xiàn)貨
 詢價
INFINEON
14
TO-247
36000
自己庫存,原裝正品假一賠百0755-27210160田生
 詢價
INFINEON原裝正品專賣
23+
TO-247
33000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
INFINEON
23+
TO-247
20000
原裝正品,假一罰十
 詢價
INFINEON原裝
ROHS全新原裝
TO-247
21870
原裝進口價格好實需詳詢QQ
 詢價
INFINEON
16+/17+
TO-247
3500
原裝正品現(xiàn)貨供應56
 詢價
INFINEON
24+
TO-247
20000
英飛凌代理渠道,只做原裝QQ:2369405325
 詢價
INFINEON/英飛凌
24+
TO-247
18226
原裝進口假一罰十
 詢價
INFINEON/英飛凌
1913+
TO-247
5763
超聲波設備/口罩機設備多種功率三極管原廠原裝正品
 詢價
更多IKW30N60T供應商 更新時間2025-4-28 11:22:00

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